January 01, 1983 article MOS (Metal Oxide Semiconductor) Physics and Technology IEE Proceedings I Solid State and Electron Devices DOI: 10.1049/ip-i-1.1983.0010 OpenAlex Authors 0 Author list not loaded yet. Cited by 4 stored of 1,748 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Replacing Doping in Nano-Silicon: Ultimate Miniaturization, Energy Efficiency, and Cryo-Functionality 2025 ACS Applied Materials & Interfaces article Engineering Advancements in Semiconductor Devices and Circuit Design Open access 2 citations Device Modeling for Admittance Spectroscopy of PMOSFETs at Cryogenic Temperatures 2024 IEEE Transactions on Electron Devices article Engineering Advancements in Semiconductor Devices and Circuit Design 2 citations Fabrication of Ultrasmall Si Encapsulated in Silicon Dioxide and Silicon Nitride as Alternative to Impurity Doping 2023 physica status solidi (a) article Engineering Advancements in Semiconductor Devices and Circuit Design Open access 2 citations Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures 2023 Advanced Physics Research article Materials Science Silicon Nanostructures and Photoluminescence Open access 2 citations 4 results References 0