August 19, 2025 article Mitigating Band Tail Effects by Electrostatic Doping in SOI Hybrid Gate MOSFETs IEEE Electron Device Letters DOI: 10.1109/led.2025.3600175 OpenAlex Authors 0 Author list not loaded yet. Cited by 0 stored of 0 References 4 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Steep Switching Si Nanowire p-FETs With Dopant Segregated Silicide Source/Drain at Cryogenic Temperature 2022 IEEE Electron Device Letters article Engineering Advancements in Semiconductor Devices and Circuit Design 23 citations Ultra-low-power cryogenic complementary metal oxide semiconductor technology 2025 Nature Reviews Electrical Engineering review Engineering Advancements in Semiconductor Devices and Circuit Design 18 citations Interface Engineering for Steep Slope Cryogenic MOSFETs 2022 IEEE Electron Device Letters article Engineering Advancements in Semiconductor Devices and Circuit Design 16 citations High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) conference-paper Engineering Advancements in Semiconductor Devices and Circuit Design 14 citations 4 results