August 02, 2019 article Open access Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling IEEE Transactions on Electron Devices DOI: 10.1109/ted.2019.2928890 Full text (OA) OpenAlex Authors 0 Author list not loaded yet. Cited by 4 stored of 75 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Threshold switching in vertically aligned MoS2/SiOx heterostructures based on silver ion migration 2025 npj 2D Materials and Applications article Engineering Advanced Memory and Neural Computing Open access 7 citations Enhanced Threshold Switching Devices Based on Conductive Filaments in SiOx Through Vertically Aligned MoS2 Layers 2025 IEEE Electron Devices Technology & Manufacturing Conference (EDTM) conference-paper Engineering Advanced Memory and Neural Computing 0 citations Volatile MoS2 Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications 2025 Small Science article Engineering Advanced Memory and Neural Computing Open access 23 citations Variability-aware modeling of electrochemical metallization memory cells 2024 Neuromorphic Computing and Engineering article Engineering Advanced Memory and Neural Computing Open access 7 citations 4 results References 0