November 22, 2024 article Advancing High-Performance Memristors Enabled by Position-Controlled Grain Boundaries in Controllably Grown Star-Shaped MoS2 Nano Letters DOI: 10.1021/acs.nanolett.4c04642 OpenAlex Authors 0 Author list not loaded yet. Cited by 4 stored of 26 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Influence of Metal–Organic Chemical Vapor Deposition MoS2 Material Properties on Memristor Resistance State and Switching Voltage Variability 2026 ACS Applied Electronic Materials article Engineering Advanced Memory and Neural Computing Open access 0 citations Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS 2 Memristors 2026 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access 2 citations Reduced Variability in Threshold Switches Using Heterostructures of SiO x and Vertically Aligned MoS 2 2026 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access 2 citations Threshold switching in vertically aligned MoS2/SiOx heterostructures based on silver ion migration 2025 npj 2D Materials and Applications article Engineering Advanced Memory and Neural Computing Open access 7 citations 4 results References 0