Atomistic Compositional Details and Their Importance for Spin Qubits in Isotope‐Purified Silicon Quantum Wells
Advanced Science, vol. 11, pp. e2407442
Abstract
Abstract Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope concentration depth profiles in a SiGe/ 28 Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time‐of‐flight secondary‐ion mass spectrometry down to their respective limits of isotope concentrations and depth resolution. Spin‐echo dephasing times and valley energy splittings E VS around have been observed for single spin qubits in this quantum well (QW) heterostructure, pointing toward the suppression of qubit decoherence through hyperfine interaction with crystal host nuclear spins or via scattering between valley states. The concentration of nuclear spin‐carrying 29 Si is 50 ± 20ppm in the 28 Si QW. The resolution limits of APT allow to uncover that both the SiGe/ 28 Si and the 28 Si/SiGe interfaces of the QW are shaped by epitaxial growth front segregation signatures on a few monolayer scale. A subsequent thermal treatment, representative of the thermal budget experienced by the heterostructure during qubit device processing, broadens the top SiGe/ 28 Si QW interface by about two monolayers, while the width of the bottom 28 Si/SiGe interface remains unchanged. Using a tight‐binding model including SiGe alloy disorder, these experimental results suggest that the combination of the slightly thermally broadened top interface and of a minimal Ge concentration of % in the QW, resulting from segregation, is instrumental for the observed large . Minimal Ge additions <1%, which get more likely in thin QWs, will hence support high E VS without compromising coherence times. At the same time, taking thermal treatments during device processing as well as the occurrence of crystal growth characteristics into account seems important for the design of reproducible qubit properties.
Authors 12
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Jan Klos Aachen
Forschungszentrum Jülich · Jülich Aachen Research Alliance · RWTH Aachen University
Affiliation as printed
JARA‐FIT Institute for Quantum Information Forschungszentrum Jülich GmbH & RWTH Aachen University 52074 Aachen Germany
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Affiliation as printed
Institute of Materials Physics University of Münster 48149 Münster Germany
Tascon GmbH 48149 Münster Germany
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Affiliation as printed
I. Physikalisches Institut IA RWTH Aachen University 52074 Aachen Germany
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University of Wisconsin–Madison
Affiliation as printed
University of Wisconsin‐Madison Madison WI 53706 USA
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Leibniz Institute for Crystal Growth
Affiliation as printed
Leibniz‐Institut für Kristallzüchtung (IKZ) 12485 Berlin Germany
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Affiliation as printed
Institute of Semiconductor Electronics RWTH Aachen University 52074 Aachen Germany
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Affiliation as printed
Institute of Materials Physics University of Münster 48149 Münster Germany
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Affiliation as printed
University of New South Wales Sydney 2025 Australia
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University of Wisconsin–Madison
Affiliation as printed
University of Wisconsin‐Madison Madison WI 53706 USA
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University of Freiburg · RWTH Aachen University
Affiliation as printed
I. Physikalisches Institut IA RWTH Aachen University 52074 Aachen Germany
INATECH, Albert‐Ludwigs Universität Freiburg 79110 Freiburg im Breisgau Germany
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Forschungszentrum Jülich · Jülich Aachen Research Alliance · RWTH Aachen University
Affiliation as printed
ARQUE Systems GmbH 52074 Aachen Germany
JARA‐FIT Institute for Quantum Information Forschungszentrum Jülich GmbH & RWTH Aachen University 52074 Aachen Germany
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Dominique Bougeard corresponding
Affiliation as printed
Institut für Experimentelle und Angewandte Physik Universität Regensburg 93040 Regensburg Germany
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