Millimeter-Wave Tunable Impedance Matching Network in an Advanced CMOS Process

IEEE Transactions on Microwave Theory and Techniques, vol. 72, pp. 4590–4596

Abstract

The impedance matching between power amplifier and antenna remains a challenge in millimeter-band front ends, particularly when the antenna impedance varies due to the use of beamforming. This article presents a tunable impedance matching filter fabricated in a 16-nm CMOS process. The frequency of operation is 77 GHz, making it suitable for millimeter-wave systems such as radar, Wi-Fi, and mobile communications. The filter is implemented using tunable quarter wavelength transmission lines. A reliability assessment supports that input powers up to 21 dBm can be used without risk. The on-wafer measurements demonstrate the functionality of the filter, which can adapt load impedances with a reflection coefficient$\Gamma$of up to 0.37 and convert them down to less than 0.20, while keeping the source match also below 0.20 and the loss under 5.5 dB. Measurements across the wafer also show low process variability.

Authors 4

1. Carla Morán Guizán Aachen Chair of Integrated Analog Circuits and RF Systems

   Intel (Germany) · RWTH Aachen University

   Affiliation as printed

   Intel, Neubiberg, Germany

   Chair of Integrated Analog Circuits and RF Systems, RWTH Aachen University, Aachen, Germany

2. Peter Baumgartner

   Intel (Germany)

   Affiliation as printed

   Intel, Neubiberg, Germany

3. Stefan J. Heinen Aachen Chair of Integrated Analog Circuits and RF Systems

   RWTH Aachen University

   Affiliation as printed

   Chair of Integrated Analog Circuits and RF Systems, RWTH Aachen University, Aachen, Germany

4. Mario Lauritano

   Karlsruhe Institute of Technology · Intel (Germany)

   Affiliation as printed

   Intel, Neubiberg, Germany

   Institute of Radio Frequency and Electronics, Karlsruhe Institute of Technology, Karlsruhe, Germany