Improved Arithmetic Performance by Combining Stateful and Non‐Stateful Logic in Resistive Random Access Memory 1T–1R Crossbars

Advanced Intelligent Systems, vol. 6

Abstract

Computing‐in‐memory (CIM) is a promising approach for overcoming the memory‐wall problem in conventional von‐Neumann architectures. This is done by performing certain computation tasks directly in the storage subsystem without transferring data between storage and processing units. Stateful and non‐stateful CIM concepts are recently attracting lots of interest, which are demonstrated as logical complete, energy efficient, and compatible with dense crossbar structures. However, sneak‐path currents in passive resistive random access memory (RRAM) crossbars degrade the operation reliability and require the usage of active 1 Transistor–1 Resistance (1T‐1R) bitcell designs. In this article, the arithmetic performance and reliability are investigated based on experimental measurements and variability‐aware circuit simulations. Herein, it is aimed for the evaluation of logic operations specifically with fully integrated 1T–1R crossbar devices. Based on these operations, an N‐bit full adder with optimized energy consumption and latency is demonstrated by combining stateful and non‐stateful CIM logic styles with regard to the specific conditions in active 1T–1R RRAM crossbars.

Authors 6

1. Leon Brackmann Aachen Institut für Werkstoffe der Elektrotechnik 2 (IWE2)

   RWTH Aachen University

   Affiliation as printed

   Institut für Werkstoffe der Elektrotechnik 2 RWTH Aachen Sommerfeldstraße 18‐24 Aachen 52074 Germany

   Institut für Werkstoffe der Elektrotechnik 2 RWTH Aachen Sommerfeldstraße 18‐24 Aachen 52074 Germany

2. Tobias Ziegler Aachen Institut für Werkstoffe der Elektrotechnik 2 (IWE2)

   RWTH Aachen University

   Affiliation as printed

   Institut für Werkstoffe der Elektrotechnik 2 RWTH Aachen Sommerfeldstraße 18‐24 Aachen 52074 Germany

   Institut für Werkstoffe der Elektrotechnik 2 RWTH Aachen Sommerfeldstraße 18‐24 Aachen 52074 Germany

3. Atousa Jafari

   Karlsruhe Institute of Technology

   Affiliation as printed

   Chair for Dependable Nano Computing KIT Haid‐und‐Neu‐Str. 7 76131 Karlsruhe Germany

   Chair for Dependable Nano Computing, KIT, Haid-und-Neu-Str. 7, 76131 Karlsruhe, Germany

4. Dirk J. Wouters Aachen Institut für Werkstoffe der Elektrotechnik 2 (IWE2)

   RWTH Aachen University

   Affiliation as printed

   Institut für Werkstoffe der Elektrotechnik 2 RWTH Aachen Sommerfeldstraße 18‐24 Aachen 52074 Germany

   Institut für Werkstoffe der Elektrotechnik 2 RWTH Aachen Sommerfeldstraße 18‐24 Aachen 52074 Germany

5. Mehdi Baradaran Tahoori

   Karlsruhe Institute of Technology

   Affiliation as printed

   Chair for Dependable Nano Computing KIT Haid‐und‐Neu‐Str. 7 76131 Karlsruhe Germany

   Chair for Dependable Nano Computing, KIT, Haid-und-Neu-Str. 7, 76131 Karlsruhe, Germany

6. Stephan Menzel corresponding

   Forschungszentrum Jülich

   Affiliation as printed

   Peter‐Grünberg‐Institut 7 Forschungszentrum Jülich 52425 Jülich Germany

   Peter‐Grünberg‐Institut 7 Forschungszentrum Jülich 52425 Jülich Germany