A Aralex Aachen research explorer

December 01, 2017 conference-paper

A 16Mb dual-mode ReRAM macro with sub-14ns computing-in-memory and memory functions enabled by self-write termination scheme

Technical digest - International Electron Devices Meeting/Technical digest

DOI: 10.1109/iedm.2017.8268468 OpenAlex

Authors 0

Author list not loaded yet.

Cited by 5 stored of 72

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO 2 ‐Based Memristive Devices
2026 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access

1

citations
Experimental Verification and Evaluation of Non-Stateful Logic Gates in Resistive RAM
2024 IEEE Transactions on Circuits and Systems I Regular Papers article Engineering Advanced Memory and Neural Computing Open access

7

citations
Improved Arithmetic Performance by Combining Stateful and Non‐Stateful Logic in Resistive Random Access Memory 1T–1R Crossbars
2023 Advanced Intelligent Systems article Engineering Advanced Memory and Neural Computing Open access

13

citations
A failure analysis framework of ReRAM In-Memory Logic operations
2022 IEEE International Test Conference in Asia (ITC-Asia) conference-paper Engineering Advanced Memory and Neural Computing

3

citations
Analysis of VMM Operations on 1S1R Crossbar Arrays and the Influence of Wire Resistances
2022 IEEE International Symposium on Circuits and Systems proceedings conference-paper Engineering Advanced Memory and Neural Computing

6

citations

5 results

References 0