Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems

IEEE Journal of the Electron Devices Society, vol. 11, pp. 432–437

Abstract

Lateral electrochemical metallization (ECM) cells are fabricated with a combined spacer/damascene process. The process allows the realization of nanoscale geometrical distances between the two electrodes independent of lithography. Such lateral ECM cells are an essential part in a reconfigurable interconnect system that may yield a strongly increased connectivity in artificial neural networks. The lateral cells show memristive properties comparable to vertical cells with switching voltages in the range of −1.5V to 2.5V. The influence of electrode line edge roughness on SET kinetics of such lateral cells is investigated via kinetic Monte Carlo simulations, finding a minor influence on SET time variability.

Authors 12

1. Thorben Frahm Aachen Institute of Semiconductor Electronics

   RWTH Aachen University

   Affiliation as printed

   Institute of Semiconductor Electronics, RWTH Aachen University, Aachen, Germany

2. Milan Buttberg Aachen Institut für Werkstoffe der Elektrotechnik II

   RWTH Aachen University

   Affiliation as printed

   Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Aachen, Germany

3. G. A. Gvozdev Aachen Institut für Werkstoffe der Elektrotechnik II

   RWTH Aachen University

   Affiliation as printed

   Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Aachen, Germany

4. Roland Müller Aachen Institute of Semiconductor Electronics

   RWTH Aachen University

   Affiliation as printed

   Institute of Semiconductor Electronics, RWTH Aachen University, Aachen, Germany

5. Shaochuan Chen Aachen Institut für Werkstoffe der Elektrotechnik II

   RWTH Aachen University

   Affiliation as printed

   Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Aachen, Germany

6. Bin Sun Aachen Institute of Semiconductor Electronics

   RWTH Aachen University

   Affiliation as printed

   Institute of Semiconductor Electronics, RWTH Aachen University, Aachen, Germany

7. Lena Raffauf Aachen Institute of Semiconductor Electronics

   RWTH Aachen University

   Affiliation as printed

   Institute of Semiconductor Electronics, RWTH Aachen University, Aachen, Germany

8. Stephan Menzel

   Forschungszentrum Jülich

   Affiliation as printed

   Peter-Grünberg Institut (PGI-7), Forschungszentrum Jülich GmbH, Juelich, Germany

9. Ilia Valov

   Forschungszentrum Jülich

   Affiliation as printed

   Peter-Grünberg Institut (PGI-7), Forschungszentrum Jülich GmbH, Juelich, Germany

10. Dirk J. Wouters Aachen Institut für Werkstoffe der Elektrotechnik II

    RWTH Aachen University

    Affiliation as printed

    Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Aachen, Germany

11. Rainer M. Waser Aachen Institut für Werkstoffe der Elektrotechnik II

    RWTH Aachen University

    Affiliation as printed

    Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Aachen, Germany

12. Joachim Knoch Aachen Institute of Semiconductor Electronics

    RWTH Aachen University

    Affiliation as printed

    Institute of Semiconductor Electronics, RWTH Aachen University, Aachen, Germany