Design Limitations in Oxide-Based Memristive Ternary Content Addressable Memories
IEEE International Symposium on Circuits and Systems proceedings, vol. 56, pp. 1–5
Abstract
Memristive devices offer energy and area efficient non-volatile data storage for data-intense Ternary Content Ad-dressable Memory (TCAM) architectures. However, depending on the storage implementation in the bitcell design, the matching functionality shows multiple undesired discharge effects leading to false look-up results. In particular, the ternary storage suffers during the look-up operation from a poor resistance ratio, match-line leakage and device variabilities. In this paper, we investigate the inherent, design-dependent limitations in the ternary state storage capability due to different memristive TCAM bitcell design parameters and device variabilities. We test these limits based on variability-aware device simulations and isolate crucial parameters for the optimization of memristive TCAMs.
Authors 6
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Affiliation as printed
Institute for Electronic Materials II, RWTH Aachen,Aachen,Germany
Institute for Electronic Materials II, RWTH Aachen, Aachen, Germany
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Affiliation as printed
Institute for Electronic Materials II, RWTH Aachen,Aachen,Germany
Institute for Electronic Materials II, RWTH Aachen, Aachen, Germany
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Karlsruhe Institute of Technology
Affiliation as printed
Karlsruhe Insitute of Technology,Department of Computer Science,Karlsruhe,Germany
Department of Computer Science, Karlsruhe Insitute of Technology, Karlsruhe, Germany
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Affiliation as printed
Institute for Electronic Materials II, RWTH Aachen,Aachen,Germany
Institute for Electronic Materials II, RWTH Aachen, Aachen, Germany
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Karlsruhe Institute of Technology
Affiliation as printed
Karlsruhe Insitute of Technology,Department of Computer Science,Karlsruhe,Germany
Department of Computer Science, Karlsruhe Insitute of Technology, Karlsruhe, Germany
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Affiliation as printed
Peter-Grünberg Institute 7, FZ Juelich,Juelich,Germany
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