Reaction-diffusion model for hydrogen release from PECVD silicon nitride

IEEE International Interconnect Technology Conference and IEEE Materials for Advanced Metallization Conference (IITC/MAM), pp. 1–3

Abstract

In this work, release of hydrogen from PECVD silicon nitride films of different thicknesses was studied using thermal desorption spectroscopy. A reaction-diffusion model is presented to describe the hydrogen release phenomenon. Change in bonded and total concentration of hydrogen in the film after rapid thermal annealing was characterized using inert gas fusion analysis and Fourier transformed infrared spectroscopy. The model was validated against experimental results.

Authors 4

1. Prafullkrishna Dani

   Robert Bosch (Germany)

   Affiliation as printed

   Robert Bosch GmbH,Reutlingen,Germany

   Robert Bosch GmbH, Reutlingen, Germany

2. Leo Rizzi

   Robert Bosch (Germany)

   Affiliation as printed

   Robert Bosch GmbH,Reutlingen,Germany

   Robert Bosch GmbH, Reutlingen, Germany

3. J. Franz

   Robert Bosch (Germany)

   Affiliation as printed

   Robert Bosch GmbH,Reutlingen,Germany

   Robert Bosch GmbH, Reutlingen, Germany

4. Joachim Knoch Aachen

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen University,Aachen,Germany

   RWTH Aachen University, Aachen, Germany