October 12, 2011 article Open access Physical and Electrical Performance Limits of High-Speed SiGeC HBTs—Part I: Vertical Scaling IEEE Transactions on Electron Devices DOI: 10.1109/ted.2011.2163722 Full text (OA) OpenAlex Authors 0 Author list not loaded yet. Cited by 3 stored of 92 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Carbon-Based Field-Effect Transistors 2022 Springer handbooks book-chapter Materials Science Graphene research and applications 0 citations Device Simulation 2022 River Publishers eBooks book-chapter Engineering Advancements in Semiconductor Devices and Circuit Design Open access 0 citations Microscopic Simulation of the RF Performance of SiGe HBTs With Additional Uniaxial Mechanical Stress 2022 IEEE Transactions on Electron Devices article Engineering Advancements in Semiconductor Devices and Circuit Design 4 citations 3 results References 0