Device Simulation

River Publishers eBooks, pp. 55–111

Abstract

Numerical simulation tools were heavily used during DOTSEVEN, aiding the device design and optimization during process development and the physical understanding of the HBT operation so as to support compact modeling. A three-dimensional thermal solver was used for investigating the temperature distribution within the device structure and its impact on the HF characteristics. The device design of advanced SiGe HBTs demands an as accurate as possible prediction of the electrical behavior in order to shorten the time from process development of new devices to product and to identify promising device structures during the early stage of process development. Compared to the BTE results, a reasonable agreement for the transfer characteristic between DD transport and BTE is obtained up to the onset of collector high current effects. Compared to DD, the HD transport model with the SDevice defaults gives already a good agreement for the transit frequency.

Authors 4

1. M. Schröter

   University of California San Diego · Technische Universität Dresden

   Affiliation as printed

   Chair for Electron Devices and Integrated Circuits, Technische Universität Dresden, Germany

   Department of Electrical and Computer Engineering, University of California at San Diego, USA

   Numerical Simulation

2. G. Wedel

   Technische Universität Dresden

   Affiliation as printed

   Chair for Electron Devices and Integrated Circuits , Technische Universität Dresden , Germany

   Numerical Simulation

   Chair for Electron Devices and Integrated Circuits, Technische Universität Dresden, Germany

3. N. Rinaldi

   University of Naples Federico II

   Affiliation as printed

   Department of Electrical Engineering and Information Technology , University Federico II , Italy

   Department of Electrical Engineering and Information Technology, University Federico II, Italy

4. C. Jungemann Aachen

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen University , Germany

   RWTH Aachen University, Germany