W3103542076

• Threshold switching in vertically aligned MoS2/SiOx heterostructures based on silver ion migration

  2025 npj 2D Materials and Applications article Engineering Advanced Memory and Neural Computing Open access

  7

  citations
• Unraveling the dynamics of conductive filaments in MoS2-based memristors by operando transmission electron microscopy

  2025 Nature Communications article Engineering Advanced Memory and Neural Computing Open access

  21

  citations
• Atomically resolved electronic properties in single layer graphene on α-Al2O3 (0001) by chemical vapor deposition

  2022 Scientific Reports article Materials Science Graphene research and applications Open access

  17

  citations
• Embedded Devices for Neuromorphic Time-Series Assessment

  2022 Research Explorer (The University of Manchester) review Engineering Advanced Memory and Neural Computing Open access

  667

  citations
• Standards for the Characterization of Endurance in Resistive Switching Devices

  2021 ACS Nano article Engineering Advanced Memory and Neural Computing Open access

  265

  citations
• Antiphase Boundaries Constitute Fast Cation Diffusion Paths in SrTiO3 Memristive Devices

  2020 Advanced Functional Materials article Engineering Advanced Memory and Neural Computing Open access

  30

  citations
• Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity

  2020 RWTH Publications (RWTH Aachen) article Engineering Advanced Memory and Neural Computing Open access

  8

  citations

7 results