Flexible Large‐Area Light‐Emitting Devices Based on WS 2 Monolayers

Advanced Optical Materials, vol. 8

Abstract

Abstract Strong covalent in‐plane bonds and a tiny thickness in the nanometer range make two‐dimensional (2D) materials ideally suited for flexible electronic or optoelectronic applications. Despite this exciting perspective, only a few prototypes of such flexible devices—photodetectors and transistors—have been reported until now. The first large‐area flexible light‐emitting device (LED) based on 2D materials is realized by integrating a transition metal dichalcogenide (TMDC) monolayer synthesized by metal organic chemical vapor deposition (MOCVD) into a p–n architecture on conductive polymer foil. This flexible LED demonstrates homogeneous red light emission from a few square millimeter area in a scalable design. Uniquely, the electroluminescence can be tuned over 30 meV simply by bending the devices, i.e., by applying a defined strain. This approach combines the flexibility of organic semiconductor device concepts with the durability of inorganic semiconductor technology.

Authors 8

1. Dominik Andrzejewski

   University of Duisburg-Essen

   Affiliation as printed

   Werkstoffe der Elektrotechnik and CENIDE Universität Duisburg‐Essen Duisburg 47057 Germany

2. Yannick Beckmann

   University of Duisburg-Essen

   Affiliation as printed

   Werkstoffe der Elektrotechnik and CENIDE Universität Duisburg‐Essen Duisburg 47057 Germany

3. Annika Grundmann Aachen Compound Semiconductor Technology

   RWTH Aachen University

   Affiliation as printed

   Compound Semiconductor Technology RWTH Aachen University Aachen 52074 Germany

   Compound Semiconductor Technology, RWTH Aachen University, Aachen, 52074 Germany

4. M. Heuken Aachen Compound Semiconductor Technology

   Aixtron (Germany) · RWTH Aachen University

   Affiliation as printed

   AIXTRON SE Herzogenrath 52134 Germany

   Compound Semiconductor Technology RWTH Aachen University Aachen 52074 Germany

   AIXTRON SE, Herzogenrath, 52134 Germany

   Compound Semiconductor Technology, RWTH Aachen University, Aachen, 52074 Germany

5. H. Kalisch Aachen Compound Semiconductor Technology

   RWTH Aachen University

   Affiliation as printed

   Compound Semiconductor Technology RWTH Aachen University Aachen 52074 Germany

   Compound Semiconductor Technology, RWTH Aachen University, Aachen, 52074 Germany

6. Andrei Vescan Aachen Compound Semiconductor Technology

   RWTH Aachen University

   Affiliation as printed

   Compound Semiconductor Technology RWTH Aachen University Aachen 52074 Germany

   Compound Semiconductor Technology, RWTH Aachen University, Aachen, 52074 Germany

7. Tilmar Kümmell corresponding

   University of Duisburg-Essen

   Affiliation as printed

   Werkstoffe der Elektrotechnik and CENIDE Universität Duisburg‐Essen Duisburg 47057 Germany

8. Gerd Bacher

   University of Duisburg-Essen

   Affiliation as printed

   Werkstoffe der Elektrotechnik and CENIDE Universität Duisburg‐Essen Duisburg 47057 Germany