March 01, 2001 article Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire IEEE Transactions on Electron Devices DOI: 10.1109/16.906458 OpenAlex Authors 0 Author list not loaded yet. Cited by 1 stored of 77 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access High-Temperature Device Characterisation, Modelling and Oscillator Design 2020 German Microwave Conference conference-paper Physics and Astronomy GaN-based semiconductor devices and materials 0 citations 1 result References 0