September 02, 2013 article WSe2 field effect transistors with enhanced ambipolar characteristics Applied Physics Letters DOI: 10.1063/1.4820408 OpenAlex Authors 0 Author list not loaded yet. Cited by 5 stored of 418 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Re‐Thinking Electronic Circuit Design Through Emerging Reconfigurable Field Effect Transistors 2026 Advanced Science article Engineering Advancements in Semiconductor Devices and Circuit Design Open access 0 citations Perovskite and 2D Semiconductor Integration into Flexible Transistors and Sensors 2023 IEEE International Flexible Electronics Technology Conference (IFETC) conference-paper Engineering Perovskite Materials and Applications 1 citations Ambipolar Thickness-Dependent Thermoelectric Measurements of WSe2 2023 Nano Letters article Materials Science Advanced Thermoelectric Materials and Devices 15 citations The Schottky barrier transistor in emerging electronic devices 2023 Nanotechnology article Engineering Advancements in Semiconductor Devices and Circuit Design Open access 54 citations Emerging reconfigurable electronic devices based on two‐dimensional materials: A review 2022 InfoMat article Materials Science 2D Materials and Applications Open access 108 citations 5 results References 0