April 01, 2015 article Transient Analysis of TSV Equivalent Circuit Considering Nonlinear MOS Capacitance Effects IEEE Transactions on Electromagnetic Compatibility DOI: 10.1109/temc.2015.2414477 OpenAlex Authors 0 Author list not loaded yet. Cited by 2 stored of 40 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Introduction to 3D Technologies 2022 Springer eBooks book-chapter Engineering 3D IC and TSV technologies 0 citations High-Level Estimation of the 3D-Interconnect Capacitances 2022 Springer eBooks book-chapter Engineering 3D IC and TSV technologies 0 citations 2 results References 0