-
Substrate-orientation dependence of β-Ga2O3 (100), (010), (001), and (2¯01) homoepitaxy by indium-mediated metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)2020 APL Materials article Materials Science Ga2O3 and related materials Open access cited by 1 patent
Piero Mazzolini, Andreas Falkenstein, Charlotte Wouters, Robert Schewski, T. Markurt, Zbigniew Galazka, +3 more
144citations -
Offcut-related step-flow and growth rate enhancement during (100) β -Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)2020 Applied Physics Letters article Materials Science Ga2O3 and related materials Open access cited by 2 patents
Piero Mazzolini, Andreas Falkenstein, Zbigniew Galazka, Manfred Martin, Oliver Bierwagen
44citations -
Molecular Beam Epitaxy of β-(InxGa1–x)2O3on β-Ga2O3(010): Compositional Control, Layer Quality, Anisotropic Strain Relaxation, and Prospects for Two-Dimensional Electron Gas Confinement2024 ACS Applied Materials & Interfaces article Materials Science Ga2O3 and related materials Open access
Piero Mazzolini, Charlotte Wouters, M. Albrecht, Andreas Falkenstein, Manfred Martin, Patrick Vogt, +1 more
24citations -
Phase-selective growth of κ- vs β-Ga2O3 and (InxGa1−x)2O3 by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy2024 RWTH Publications (RWTH Aachen) article Materials Science Ga2O3 and related materials Open access
A. Ardenghi, O. Bierwagen, Jonas Lähnemann, E. Luna, J. Kler, Andreas Falkenstein, +3 more
0citations
19 results