MOVPE technology progress for GaO-based devices

Abstract

This talk presents a summary on recent progress in Metal-Organic Chemical Vapor Deposition (MOCVD) technology to satisfy industrial and academic demand in epitaxial growth technology as well as the direct impact on device performance. We discuss notable advancements in MOCVD, including improved film quality, growth uniformity, impurity control, dislocation reduction, automation, and simulation. Key factors driving progress include novel advanced reactor designs, automated wafer handling, cleaning procedures to minimize particle density on wafer and optimized process parameters on even larger wafer as well as continuous stable operation of the system. As examples for new market opportunities wide band gap (GaO, GaN, SiC) power devices and the related technology aspects will be compared and discussed.

Authors 1

1. M. Heuken corresponding Aachen

   RWTH Aachen University · Aixtron (Germany)

   Affiliation as printed

   AIXTRON SE (Germany)

   RWTH Aachen Univ. (Germany)