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Journal / venue: Solid-State Electronics ×

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Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures
2022 Solid-State Electronics article Engineering Advancements in Semiconductor Devices and Circuit Design cited by 2 patents

Yi Han, Fengben Xi, F. Allibert, Ionut Radu, Sławomir Prucnal, Jin Hee Bae, +4 more

12

citations
Cryogenic characteristics of UTBB SOI Schottky-Barrier MOSFETs
2022 Solid-State Electronics article Engineering Advancements in Semiconductor Devices and Circuit Design

Yi Han, Jingxuan Sun, Fengben Xi, Jin Hee Bae, Detlev Grützmacher, Qing‐Tai Zhao

10

citations
Improved performance of FDSOI FETs at cryogenic temperatures by optimizing ion implantation into silicide
2023 Solid-State Electronics article Engineering Advancements in Semiconductor Devices and Circuit Design

Yi Han, Jingxuan Sun, Ionut Radu, Joachim Knoch, Detlev Grützmacher, Qing‐Tai Zhao

7

citations
Massively parallel FDTD full-band Monte Carlo simulations of electromagnetic THz pulses in p-doped silicon at cryogenic temperatures
2022 Solid-State Electronics article Engineering Terahertz technology and applications

Christoph Jungemann, Fanqi Meng, Mark D. Thomson, Hartmut G. Roskos

3

citations
Massively parallel FDTD-FBMC simulations of nonlinear hole dynamics in silicon at cryogenic temperatures driven by intense EM THz pulses
2023 Solid-State Electronics article Engineering Terahertz technology and applications

Christoph Jungemann, Mark D. Thomson, Fanqi Meng, Hartmut G. Roskos

2

citations

5 results