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Filamentary TaO x /HfO 2 ReRAM Devices for Neural Networks Training with Analog In‐Memory Computing2022 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access
Tommaso Stecconi, Roberto Guido, Luca Berchialla, Antonio La Porta, Jonas Weiß, Youri Popoff, +8 more
43citations -
Chemical Structure of Conductive Filaments in Tantalum Oxide Memristive Devices and Its Implications for the Formation Mechanism2022 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access
Thomas Heisig, Kristof Lange, Alexander Gutsche, Kalle Goß, Sebastian Hambsch, Andrea Locatelli, +4 more
43citations -
Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices2020 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access
Sebastian Siegel, Christoph Baeumer, Alexander Gutsche, Moritz von Witzleben, Rainer Waser, Stephan Menzel, +1 more
40citations -
A Deep Study of Resistance Switching Phenomena in TaOx ReRAM Cells: System‐Theoretic Dynamic Route Map Analysis and Experimental Verification2022 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access cited by 1 patent
Alon Ascoli, Stephan Menzel, Vikas Rana, Tim Kempen, Ioannis Messaris, Ahmet Şamil Demirkol, +3 more
37citations -
Strategies to Control the Relaxation Kinetics of Ag‐Based Diffusive Memristors and Implications for Device Operation2022 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access
Solomon Amsalu Chekol, Stephan Menzel, Rainer M. Waser, Susanne Hoffmann‐Eifert
27citations -
Correlation between Electronic Structure, Microstructure, and Switching Mode in Valence Change Mechanism Al2O3/TiOx‐Based Memristive Devices2023 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access
Stephan Aussen, Felix Cüppers, Carsten Funck, Janghyun Jo, Stephan Werner, Christoph Pratsch, +5 more
23citations -
Heterosynaptic Plasticity and Neuromorphic Boolean Logic Enabled by Ferroelectric Polarization Modulated Schottky Diodes2022 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access
Fengben Xi, Andreas Grenmyr, Jiayuan Zhang, Yi Han, Jin Hee Bae, Detlev Grützmacher, +1 more
17citations -
Impact of Non‐Stoichiometric Phases and Grain Boundaries on the Nanoscale Forming and Switching of HfOx Thin Films2024 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access
Niclas Schmidt, Nico Kaiser, Tobias Vogel, Eszter Piros, Silvia Karthäuser, Rainer M. Waser, +2 more
12citations -
Volume Contraction Upon Resistive Switching in Cr‐Doped V 2 O 3 as a Key Mechanism for Mottronics Applications2025 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access
Danylо Babich, Julien Tranchant, Coline Adda, B. Corraze, Marie‐Paule Besland, Peter Warnicke, +9 more
4citations -
Reduced Variability in Threshold Switches Using Heterostructures of SiO x and Vertically Aligned MoS 22026 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access
Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, +4 more
2citations -
Influence of Top Electrode Metal on Resistive Switching in Multilayer MOCVD MoS 2 Memristors2026 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access
Dennis Braun, Jing Liu, Vasilis A. Maroufidis, Hleb Fiadziushkin, Lukas Völkel, Jimin Lee, +10 more
2citations -
The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO 2 ‐Based Memristive Devices2026 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access
Oliver Artner, Felix Cüppers, Seokki Son, Yang Chen, Xiaohua Liu, Christopher Bengel, +6 more
1citations
19 results