Resistive Switching Acceleration Induced by Thermal Confinement

Advanced Electronic Materials, vol. 11

Abstract

Abstract Enhancing the switching speed of oxide‐based memristive devices at a low voltage level is crucial for their use as non‐volatile memory and their integration into emerging computing paradigms such as neuromorphic computing. Efforts to accelerate the switching speed often result in an energy trade‐off, leading to an increase in the minimum working voltage. In this study, an innovative solution is presented: the introduction of a low thermal conductivity layer placed within the active electrode, which impedes the dissipation of heat generated during the switching process. The result is a notable acceleration in the switching speed of the memristive model system SrTiO 3 by a remarkable factor of 10 3 , while preserving the integrity of the switching layer and the interfaces with the electrodes, rendering it adaptable to various filamentary memristive systems. The incorporation of HfO 2 or TaO x as heat‐blocking layers not only streamlines the fabrication process but also ensures compatibility with complementary metal‐oxide‐semiconductor technology.

Authors 5

1. Alexandros Sarantopoulos corresponding

   Forschungszentrum Jülich · Jülich Aachen Research Alliance

   Affiliation as printed

   Peter Gruenberg Institute (PGI‐7) Forschungszentrum Juelich GmbH and JARA‐FIT 52425 Juelich Germany

   Peter Gruenberg Institute (PGI-7), Forschungszentrum Juelich GmbH and JARA-FIT, 52425 Juelich, Germany

2. Kristof Lange Aachen IWE2

   RWTH Aachen University

   Affiliation as printed

   IWE2 RWTH Aachen University 52074 Aachen Germany

   IWE2, RWTH Aachen University, 52074 Aachen, Germany

3. F. Rivadulla

   Universidade de Santiago de Compostela

   Affiliation as printed

   Centro de Investigación en Química Biológica y Materiales Moleculares (CIQUS) Universidad de Santiago de Compostela Santiago de Compostela 15782 Spain

4. Stephan Menzel Aachen IWE2

   Forschungszentrum Jülich · Jülich Aachen Research Alliance · RWTH Aachen University

   Affiliation as printed

   IWE2 RWTH Aachen University 52074 Aachen Germany

   Peter Gruenberg Institute (PGI‐7) Forschungszentrum Juelich GmbH and JARA‐FIT 52425 Juelich Germany

   IWE2, RWTH Aachen University, 52074 Aachen, Germany

   Peter Gruenberg Institute (PGI-7), Forschungszentrum Juelich GmbH and JARA-FIT, 52425 Juelich, Germany

5. Regina Dittmann

   Forschungszentrum Jülich · Jülich Aachen Research Alliance

   Affiliation as printed

   Peter Gruenberg Institute (PGI‐7) Forschungszentrum Juelich GmbH and JARA‐FIT 52425 Juelich Germany

   Peter Gruenberg Institute (PGI-7), Forschungszentrum Juelich GmbH and JARA-FIT, 52425 Juelich, Germany