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Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures2020 AIP Advances article Physics and Astronomy GaN-based semiconductor devices and materials Open access
Sven Besendörfer, Elke Meißner, Thorsten Zweipfennig, Hady Yacoub, Dirk Fahle, Hannes Behmenburg, +4 more
26citations -
Applicability of a Flat-Bed Birefringence Setup for the Determination of Threading Dislocations of Silicon Carbide Wafers2022 Materials science forum article Engineering Silicon Carbide Semiconductor Technologies Open access
Johannes Steiner, Binh Duong Nguyen, Melissa Roder, A.N. Danilewsky, Stefan Sandfeld, Peter J. Wellmann
0citations -
AstroECP : towards more practical electron channeling contrast imaging2026 Journal of Applied Crystallography article Biochemistry, Genetics and Molecular Biology Advanced Electron Microscopy Techniques and Applications Open access
M. Haroon Qaiser, Lukas Berners, Robin J. Scales, Tianbi Zhang, Martin Heller, Jiří Dluhoš, +2 more
4citations -
Selective-area growth study of GaN micropillars for quasi-vertical Schottky diodes2021 Semiconductor Science and Technology article Physics and Astronomy GaN-based semiconductor devices and materials cited by 5 patents
Arne Debald, Simon Kotzea, H Ahmadsad, M. Heuken, H. Kalisch, Andrei Vescan
6citations
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