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Eliminating Capacitive Sneak Paths in Associative Capacitive Networks based on Complementary Resistive Switches for In-Memory Computing2023 IEEE International Memory Workshop (IMW) conference-paper Engineering Advanced Memory and Neural Computing
Tobias Ziegler, Leon Brackmann, Tyler Hennen, Christopher Bengel, Stephan Menzel, Dirk J. Wouters
0citations -
Reduced Variability in Threshold Switches Using Heterostructures of SiO x and Vertically Aligned MoS 22026 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access
Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, +4 more
2citations -
Synthese und resistive Schaltmechanismen von Mott-Isolatoren basierend auf undotieren und Cr-dotierten Vanadiumoxid Dünnschichten als Funktion der Nanostruktur und der Materialeigenschaften0citations
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Structure‐Dependent Influence of Moisture on Resistive Switching Behavior of ZnO Thin Films2021 Advanced Materials Interfaces article Engineering Advanced Memory and Neural Computing Open access
Gianluca Milano, Michael Luebben, Marco Laurenti, Luca Boarino, Carlo Ricciardi, Ilia Valov
32citations -
Characteristics of High-Risk Polycythemia Vera Patients with Suboptimal Response to First-Line Therapy Who Switched to Ruxolitinib Vs Those Who Did Not Switch: Findings from PV-Switch, a Multinational, Retrospective Chart Review Study
Steffen Koschmieder, Eyck von der Heyde, Lambert Busque, Françoise Boyer‐Perrard, Timothy Devos, Francesco Passamonti, +9 more
1citations -
Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes2023 Advanced Functional Materials article Engineering Advanced Memory and Neural Computing Open access cited by 1 patent
Lukas Völkel, Dennis Braun, Melkamu Belete, Satender Kataria, T. Wahlbrink, Ke Ran, +5 more
50citations -
Volume Contraction Upon Resistive Switching in Cr‐Doped V 2 O 3 as a Key Mechanism for Mottronics Applications2025 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access
Danylо Babich, Julien Tranchant, Coline Adda, B. Corraze, Marie‐Paule Besland, Peter Warnicke, +9 more
4citations -
Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics2021 arXiv (Cornell University) preprint Engineering Advanced Memory and Neural Computing Open access
Danylо Babich, Julien Tranchant, Coline Adda, B. Corraze, Marie‐Paule Besland, Daniel Bedau, +9 more
3citations