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A Godunov-type stabilization scheme for the Boltzmann transport equation of III-V devices with a 3D k-space2024 Journal of Computational Electronics article Engineering Advancements in Semiconductor Devices and Circuit Design Open access
Hendrik Leenders, Paul Luckner, Tobias Linn, Christoph Jungemann
2citations -
Effect of surface gallium termination on the formation and emission energy of an InGaAs wetting layer during the growth of InGaAs quantum dots by droplet epitaxy2022 Nanotechnology article Physics and Astronomy Semiconductor Quantum Structures and Devices Open access
P. Atkinson, X. Jin, Mihail Ion Lepsa, András Kovács, Lidia Kibkalo, Rafal E. Dunin‐Borkowski, +1 more
2citations
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