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Characterization of fully silicided source/drain SOI UTBB nMOSFETs at cryogenic temperatures2022 Solid-State Electronics article Engineering Advancements in Semiconductor Devices and Circuit Design cited by 2 patents
Yi Han, Fengben Xi, F. Allibert, Ionut Radu, Sławomir Prucnal, Jin Hee Bae, +4 more
12citations
1 result