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Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures2020 AIP Advances article Physics and Astronomy GaN-based semiconductor devices and materials Open access
Sven Besendörfer, Elke Meißner, Thorsten Zweipfennig, Hady Yacoub, Dirk Fahle, Hannes Behmenburg, +4 more
26citations -
Selective-area growth study of GaN micropillars for quasi-vertical Schottky diodes2021 Semiconductor Science and Technology article Physics and Astronomy GaN-based semiconductor devices and materials cited by 5 patents
Arne Debald, Simon Kotzea, H Ahmadsad, M. Heuken, H. Kalisch, Andrei Vescan
6citations -
Quantum Transport in Topological Surface States of Selectively Grown Bi 2 Te 3 Nanoribbons2020 RWTH Publications (RWTH Aachen) article Physics and Astronomy Topological Materials and Phenomena Open access
Daniel Rosenbach, Abdur Rehman Jalil, M. Mikulics, Jonas Kölzer, Erik Zimmermann, Gregor Mußler, +4 more
27citations -
Tailoring potentials by simulation-aided design of gate layouts for spin-qubit applications2023 Physical Review Applied article Physics and Astronomy Quantum and electron transport phenomena Open access
Inga Seidler, Malte Neul, Eugen Kammerloher, Matthias Künne, Andreas Schmidbauer, Laura K. Diebel, +6 more
5citations -
Van Hove tuning of Fermi surface instabilities through compensated metallicity2025 Physical review. B./Physical review. B article Physics and Astronomy Topological Materials and Phenomena Open access
Hendrik Hohmann, Matteo Dürrnagel, Matthew Bunney, Stefan Enzner, Tilman Schwemmer, Titus Neupert, +3 more
2citations
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