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Selective-area growth study of GaN micropillars for quasi-vertical Schottky diodes2021 Semiconductor Science and Technology article Physics and Astronomy GaN-based semiconductor devices and materials cited by 5 patents
Arne Debald, Simon Kotzea, H Ahmadsad, M. Heuken, H. Kalisch, Andrei Vescan
6citations -
Thermal expansion and temperature dependence of Raman modes in epitaxial layers of Ge and Ge1−xSnx2024 Physical Review Materials article Physics and Astronomy Semiconductor materials and interfaces Open access
Agnieszka Anna Corley‐Wiciak, Diana Ryzhak, Marvin Hartwig Zoellner, Costanza Lucia Manganelli, Omar Concepción, Oliver Skibitzki, +4 more
5citations -
Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures2020 AIP Advances article Physics and Astronomy GaN-based semiconductor devices and materials Open access
Sven Besendörfer, Elke Meißner, Thorsten Zweipfennig, Hady Yacoub, Dirk Fahle, Hannes Behmenburg, +4 more
26citations
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