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Empirical Tunneling Model Describing the Retention of 2.5 Mb HfO2 based ReRAM2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) conference-paper Engineering Advanced Memory and Neural Computing
Stefan Wiefels, U. Böttger, Stephan Menzel, Dirk J. Wouters, Rainer M. Waser
3citations -
Microscopic origins of electron trapping in amorphous silicon nitride ( a -Si 3 N 4 ) and its role in charge-trap flash memory2026 Journal of Physics Condensed Matter article Engineering Semiconductor materials and devices Open access
Christoph Wilhelmer, Lukas Hückmann, Jonathon P. Cottom, Dominic Waldhoer, Jörg Meyer, Tibor Grasser
0citations -
A Consistent Model for Short-Term Instability and Long-Term Retention in Filamentary Oxide-Based Memristive Devices2021 ACS Applied Materials & Interfaces article Engineering Advanced Memory and Neural Computing Open access
Nils Kopperberg, Stefan Wiefels, Sergej Liberda, Rainer M. Waser, Stephan Menzel
37citations -
Trade‐Off Between Data Retention and Switching Speed in Resistive Switching ReRAM Devices2020 Advanced Electronic Materials article Engineering Advanced Memory and Neural Computing Open access
Sebastian Siegel, Christoph Baeumer, Alexander Gutsche, Moritz von Witzleben, Rainer Waser, Stephan Menzel, +1 more
40citations -
Realization of Ternary Łukasiewicz Logic using BiFeO3-based Memristive Devices2023 IEEE International Conference on Electronics, Circuits and Systems (ICECS) conference-paper Engineering Advanced Memory and Neural Computing
Feng Liu, Xianyue Zhao, Ziang Chen, Christopher Bengel, Nan Du, Stephan Menzel
1citations -
Nonvolatile Resistive Switching in Nanocrystalline Molybdenum Disulfide with Ion-Based Plasticity2020 RWTH Publications (RWTH Aachen) article Engineering Advanced Memory and Neural Computing Open access
Melkamu Belete, Satender Kataria, Aykut Turfanda, Sam Vaziri, T. Wahlbrink, Olof Engström, +1 more
8citations
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