Wafer-scale Memristors based on Atomic Layer Deposited WS 2
IEEE Electron Devices Technology & Manufacturing Conference (EDTM), pp. 1–3
Abstract
Recently, two-dimensional materials have emerged as promising candidates for next-generation memristive devices. In this work, atomic layer deposited 2D tungsten disulfide (WS2) was employed as the resistive switching medium for wafer-scale memristors. The memristors demonstrated stable current-voltage cycling endurance over 103cycles and robust data retention exceeding 105s. Furthermore, resistive switching with a set time as low as tens of nanoseconds was observed under pulsed voltage stress. By varying pulse parameters, we could also achieve short-term to long-term plasticity transition, highlighting their potential for artificial synaptic applications.
Authors 7
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Affiliation as printed
AMO GmbH Advanced Microelectronic Center Aachen,Aachen,Germany
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Eindhoven University of Technology
Affiliation as printed
Eindhoven University of Technology,Department of Applied Physics and Science Education,Eindhoven,The Netherlands
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Affiliation as printed
AMO GmbH Advanced Microelectronic Center Aachen,Aachen,Germany
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Affiliation as printed
AMO GmbH Advanced Microelectronic Center Aachen,Aachen,Germany
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Affiliation as printed
AMO GmbH Advanced Microelectronic Center Aachen,Aachen,Germany
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Eindhoven University of Technology
Affiliation as printed
Eindhoven University of Technology,Department of Applied Physics and Science Education,Eindhoven,The Netherlands
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Affiliation as printed
AMO GmbH Advanced Microelectronic Center Aachen,Aachen,Germany
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