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Optimizing time-of-flight secondary ion mass spectrometry depth profiles of semiconductor heterostructures2025 Journal of Applied Physics article Engineering Ion-surface interactions and analysis Open access
Jan Tröger, Reinhard Kersting, Birgit Hagenhoff, Dominique Bougeard, Nikolay V. Abrosimov, Jan Klos, +2 more
5citations -
Ultra-low-power cryogenic complementary metal oxide semiconductor technology2025 Nature Reviews Electrical Engineering review Engineering Advancements in Semiconductor Devices and Circuit Design Open access
Qing‐Tai Zhao, Yi Han, Hung-Chi Han, Lars R. Schreiber, Tsung-En Lee, Hung-Li Chiang, +6 more
20citations -
Foreword Special Issue on “New Simulation Methodologies for Next-Generation TCAD Tools”2021 IEEE Transactions on Electron Devices editorial Engineering Advancements in Semiconductor Devices and Circuit Design Open access
Christoph Jungemann, Fabrizio Bonani, Elena Gnani, Sung‐Min Hong, Seonghoon Jin, Xiaoyan Liu, +2 more
0citations
4 results