April 23, 2026 article Flexible and Fully Printed Artificial Synaptic Devices Based on h-BN-Gated Tellurene Memtransistor ACS Nano DOI: 10.1021/acsnano.6c00995 OpenAlex Authors 0 Author list not loaded yet. Cited by 0 stored of 1 References 2 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Resistive Switching and Current Conduction Mechanisms in Hexagonal Boron Nitride Threshold Memristors with Nickel Electrodes 2023 Advanced Functional Materials article Engineering Advanced Memory and Neural Computing Open access cited by 1 patent 50 citations Two-dimensional tellurium-based diodes for RF applications 2023 npj 2D Materials and Applications article Materials Science 2D Materials and Applications Open access 19 citations 2 results