Two-dimensional tellurium-based diodes for RF applications

npj 2D Materials and Applications, vol. 7

Abstract

Abstract The research of two-dimensional (2D) Tellurium (Te) or tellurene is thriving to address current challenges in emerging thin-film electronic and optoelectronic devices. However, the study of 2D-Te-based devices for high-frequency applications is still lacking in the literature. This work presents a comprehensive study of two types of radio frequency (RF) diodes based on 2D-Te flakes and exploits their distinct properties in two RF applications. First, a metal-insulator-semiconductor (MIS) structure is employed as a nonlinear device in a passive RF mixer, where the achieved conversion loss at 2.5 GHz and 5 GHz is as low as 24 dB and 29 dB, respectively. Then, a metal-semiconductor (MS) diode is tested as a zero-bias millimeter-wave power detector and reaches an outstanding linear-in-dB dynamic range over 40 dB, while having voltage responsivities as high as 257 V ⋅ W−1at 1 GHz (up to 1 V detected output voltage) and 47 V ⋅ W−1at 2.5 GHz (up to 0.26 V detected output voltage). These results show superior performance compared to other 2D material-based devices in a much more mature technological phase. Thus, the authors believe that this work demonstrates the potential of 2D-Te as a promising material for devices in emerging high-frequency electronics.

Authors 7

1. Abdelrahman M. Askar corresponding

   Simon Fraser University

   Affiliation as printed

   School of Engineering Science, Simon Fraser University, 8888 University Drive, Burnaby, British Columbia, V5A 1S6, Canada

2. Paula Palacios corresponding Aachen Chair of High Frequency Electronics

   RWTH Aachen University

   Affiliation as printed

   Chair of High Frequency Electronics (HFE), RWTH Aachen University, Koppernikusstr. 16, 52074, Aachen, Germany

3. Francisco Pasadas corresponding

   Universidad de Granada

   Affiliation as printed

   Pervasive Electronics Advanced Research Laboratory (PEARL), Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Campus de Fuentenueva, 18071, Granada, Spain

4. Mohamed Saeed Aachen Chair of High Frequency Electronics

   RWTH Aachen University

   Affiliation as printed

   Chair of High Frequency Electronics (HFE), RWTH Aachen University, Koppernikusstr. 16, 52074, Aachen, Germany

5. Mohammad Reza Mohammadzadeh

   Simon Fraser University

   Affiliation as printed

   School of Engineering Science, Simon Fraser University, 8888 University Drive, Burnaby, British Columbia, V5A 1S6, Canada

6. Renato Negra Aachen Chair of High Frequency Electronics

   RWTH Aachen University

   Affiliation as printed

   Chair of High Frequency Electronics (HFE), RWTH Aachen University, Koppernikusstr. 16, 52074, Aachen, Germany

7. Michael Musashi Adachi

   Simon Fraser University

   Affiliation as printed

   School of Engineering Science, Simon Fraser University, 8888 University Drive, Burnaby, British Columbia, V5A 1S6, Canada