Integration of Low-Voltage Nanoscale MoS${_2}$ Memristors on CMOS Microchips

RWTH Publications (RWTH Aachen)

Abstract

Two-dimensional materials (2DMs) are gaining increased attention for applications such as advanced electronics and neuromorphic computing due to their excellent electrical properties. Among these 2DMs, molybdenum disulfide (MoSS${_2}$) has shown promise as a resistive switching (RS) layer for memory, selectors, and neuromorphic systems. Electrochemical metallization (ECM) devices based on 2DMs offer ultra-low energy consumption, large ON/OFF ratios, and switching at sub-nanometer thicknesses. However, most demonstrations rely on isolated, micrometer-scale structures fabricated on SiOS${_2}$/Si substrates. The integration of 2DM-based memristors onto silicon complementary metal-oxide-semiconductor (CMOS) platforms is rarely reported, particularly for MoSS${_2}$. This work presents the first nanoscale ~0.015 μm2 active area MoSS${_2}$-based memristors integrated in the back-end-of-line of 350 nm-technology CMOS microchips. One-transistor-one-resistor (1T1R) cells exhibited forming-free, nonvolatile RS with ultra-low operating voltages (~0.23 V for the SET and ~-0.1 V for the RESET) and low cycle-to-cycle variability (6.7%). We provide the current-voltage (I-V) characteristics of 19 MoS${_2}$-based 1T1R cells, revealing high repeatability across multiple cycles and devices. Our work represents a significant step toward integrating MoSS${_2}$-based nonvolatile memristive devices onto silicon CMOS microchips.

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