A THz graphene-on-hBN stack patch antenna for future 6G communications

Scientific Reports, vol. 15, pp. 32650

Abstract

Wireless communications have progressively tapped into higher frequency bands seeking higher bandwidth and integration, opening the door to short-range applications such as data kiosks, wireless chip interconnects, or intra-body networks. Graphene antennas working at terahertz (THz) frequencies are theoretically smaller in size compared to metallic antennas working at the same frequency, pushing the boundaries of integration further. However, such miniaturization ability has not yet been experimentally validated. This study presents the first working THz antenna based on chemical vapor deposited (CVD) monolayer graphene. The antenna, placed on the hexagonal Boron Nitride (hBN) buffer layer, comprises a multi-layer stack of two graphene patches separated by a thin dielectric, resulting in a significantly more efficient antenna than a standard one-layer graphene antenna. The proposed antenna shows a resonance frequency of 250.7 GHz and a gain of -9.5 dB. The miniaturization and frequency tuning capabilities of graphene antennas make the proposed graphene stack patch antenna a valuable asset for 6G short-range communications. Additionally, the proposed graphene stack antenna can be integrated in the back-end-of-line with CMOS manufacturing techniques and applied to future THz communication systems.

Authors 9

1. Elana Pereira de Santana corresponding

   University of Siegen

   Affiliation as printed

   Institute of High Frequency and Quantum Electronics, University of Siegen, 57076, Siegen, Germany. elana.psantana@uni-siegen.de

   Institute of High Frequency and Quantum Electronics, University of Siegen, 57076, Siegen, Germany

2. Kun‐Ta Wang Aachen AMO GmbH Advanced Microelectronic Center Aachen Chair of Electronic Devices

   AMO (Germany) · RWTH Aachen University

   Affiliation as printed

   AMO GmbH, Advanced Microelectronic Center Aachen (AMICA), 52074, Aachen, Germany

   Chair of Electronic Devices, RWTH Aachen University, 52074, Aachen, Germany

3. Sergi Abadal

   Universitat Politècnica de Catalunya

   Affiliation as printed

   NanoNetworking Center in Catalunya (N3Cat), Universitat Politècnica de Catalunya, 08034, Barcelona, Spain

4. Daniel Stock

   University of Siegen

   Affiliation as printed

   Institute of High Frequency and Quantum Electronics, University of Siegen, 57076, Siegen, Germany

5. Zhenxing Wang Aachen AMO GmbH Advanced Microelectronic Center Aachen

   AMO (Germany)

   Affiliation as printed

   AMO GmbH, Advanced Microelectronic Center Aachen (AMICA), 52074, Aachen, Germany

6. Anna Katharina Wigger

   University of Siegen

   Affiliation as printed

   Institute of High Frequency and Quantum Electronics, University of Siegen, 57076, Siegen, Germany

7. Eduard Alarcón

   Universitat Politècnica de Catalunya

   Affiliation as printed

   NanoNetworking Center in Catalunya (N3Cat), Universitat Politècnica de Catalunya, 08034, Barcelona, Spain

8. Max C. Lemme Aachen AMO GmbH Advanced Microelectronic Center Aachen Chair of Electronic Devices

   AMO (Germany) · RWTH Aachen University

   Affiliation as printed

   AMO GmbH, Advanced Microelectronic Center Aachen (AMICA), 52074, Aachen, Germany

   Chair of Electronic Devices, RWTH Aachen University, 52074, Aachen, Germany

9. P. Haring Bolívar

   University of Siegen

   Affiliation as printed

   Institute of High Frequency and Quantum Electronics, University of Siegen, 57076, Siegen, Germany