2D Materials for Neuromorphic Computing Devices

IEEE Electron Devices Technology & Manufacturing Conference (EDTM), pp. 1–3

Abstract

Two-dimensional materials show promise for resistive switching devices as building blocks for neuromorphic computing. We explore$\text{MoS}_{2}$in different device configurations utilizing ion transport along van der Waals gaps, revealing reduced variability and high yields. We demonstrate volatile switching in vertical bilayer stacks of$\text{SiO}_{\mathrm{x}}$and$\text{MoS}_{2}$. We also show lateral$\text{MoS}_{2}$devices with ultra-low threshold voltages. Temperature-dependent current-voltage data on h-BN memristors elucidate conduction mechanisms for a deeper understanding of the resistive switching mechanism.

Authors 5

1. Max C. Lemme Aachen Chair of Electronic Devices

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen University,Chair of Electronic Devices,Aachen,Germany,52074

2. Lukas Völkel Aachen Chair of Electronic Devices

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen University,Chair of Electronic Devices,Aachen,Germany,52074

3. Sofía Cruces Aachen Chair of Electronic Devices

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen University,Chair of Electronic Devices,Aachen,Germany,52074

4. Jimin Lee Aachen Chair of Electronic Devices

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen University,Chair of Electronic Devices,Aachen,Germany,52074

5. Yuan Fa Aachen Chair of Electronic Devices

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen University,Chair of Electronic Devices,Aachen,Germany,52074