March 13, 2025 article Open access Electrostatic Gating in Ge-Based Reconfigurable Field-Effect Transistors IEEE Transactions on Electron Devices DOI: 10.1109/ted.2025.3545802 Full text (OA) OpenAlex Authors 0 Author list not loaded yet. Cited by 0 stored of 0 References 3 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Artificial Synapses Based on Ferroelectric Schottky Barrier Field-Effect Transistors for Neuromorphic Applications 2021 ACS Applied Materials & Interfaces article Engineering Advanced Memory and Neural Computing Open access 71 citations The Schottky barrier transistor in emerging electronic devices 2023 Nanotechnology article Engineering Advancements in Semiconductor Devices and Circuit Design Open access 54 citations On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors 2021 IEEE Transactions on Electron Devices article Engineering Advancements in Semiconductor Devices and Circuit Design Open access 21 citations 3 results