April 30, 2018 article Improvement of HfOx-Based RRAM Device Variation by Inserting ALD TiN Buffer Layer IEEE Electron Device Letters DOI: 10.1109/led.2018.2831698 OpenAlex Authors 0 Author list not loaded yet. Cited by 3 stored of 86 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access The show must go on: a reliability assessment platform for resistive random access memory crossbars 2025 Philosophical Transactions of the Royal Society A Mathematical Physical and Engineering Sciences article Engineering Advanced Memory and Neural Computing 1 citations A Fully Automated Platform for Evaluating ReRAM Crossbars 2024 IEEE Latin American Test Symposium (LATS) conference-paper Engineering Advanced Memory and Neural Computing 7 citations Variability Reduction with Bilayer RRAM Device 2023 International Workshop on Cellular Nanoscale Networks and their Applications (CNNA) conference-paper Engineering Advanced Memory and Neural Computing 0 citations 3 results References 0