NVM-Flip: Non-Volatile-Memory BitFlips on the System Level

Abstract

Emerging non-volatile memories (NVMs) are promising candidates to substitute conventional memories due to their low access latency, high integration density, and non-volatility. These superior properties stem from the memristor representing the centerpiece of each memory cell and is branded as the fourth fundamental circuit element. Memristors encode information in the form of its resistance by altering the physical characteristics of their filament. Hence, each memristor can store multiple bits increasing the memory density and positioning it as a potential candidate to replace DRAM and SRAM-based memories, such as caches.

Authors 10

1. Felix Staudigl Aachen

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen, Aachen, Germany

2. Jan Philipp Thoma

   Ruhr University Bochum

   Affiliation as printed

   Ruhr-University Bochum, Bochum, Germany

3. Christian Niesler

   University of Duisburg-Essen

   Affiliation as printed

   University of Duisburg-Essen, Essen, Germany

4. Karl J. X. Sturm Aachen

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen, Aachen, Germany

5. Rebecca Pelke Aachen

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen, Aachen, Germany

6. Dominik Germek

   Robert Bosch (Germany)

   Affiliation as printed

   Corporate Research Robert Bosch GmbH, Aachen, Germany

7. Jan Moritz Joseph Aachen

   RWTH Aachen University

   Affiliation as printed

   RWTH Aachen, Aachen, Germany

8. Tim E. Güneysu

   Ruhr University Bochum

   Affiliation as printed

   Ruhr-University Bochum, Bochum, Germany

9. Lucas Davi

   University of Duisburg-Essen

   Affiliation as printed

   University of Duisburg-Essen, Essen, Germany

10. Rainer Leupers Aachen

    RWTH Aachen University

    Affiliation as printed

    RWTH Aachen, Aachen, Germany