Non-idealities and Design Solutions for Analog Memristor-Based Content-Addressable Memories
Abstract
Memristor-based analog Content Addressable Memories (aCAMs) offer robust parallel pattern look-up capabilities, significantly enhancing the scope of In-Memory Computing applications. This paper presents challenges of these analog circuits, which may occur during the inference, and proposes solutions to overcome them. Precisely, we investigate the impact of temperature-dependent behavior, CMOS process variations and memristor telegraph read noise. We demonstrate that one challenging issue affecting memristors analog computing applications, namely telegraph read noise, is not a significant problem in aCAM. We introduce a framework that accounts for these combined distortions to define variability-aware aCAM windows and estimate the bit resolution of a CAM cell. Using this framework we estimate the bit resolution to 2 bits before applying compensating measures and to 4 bits afterwards. We study how variations affect the inference accuracy of the IRIS classification dataset using our novel torchCAM model. We introduce a streamlined aCAM design featuring a memristor comparator for simplified input-to-reference comparison and a novel cell architecture with two symmetrical memristor comparator units.
Authors 4
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Forschungszentrum Jülich · RWTH Aachen University
Affiliation as printed
Forschungszentrum Jülich GmbH, Peter Grünberg Institut 14, Germany and RWTH Aachen University, Faculty of Electrical Engineering and Information Technology, Germany
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Affiliation as printed
Forschungszentrum Jülich GmbH, Peter Grünberg Institut 14, Germany
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Affiliation as printed
Forschungszentrum Jülich GmbH, Peter Grünberg Institut 7, Germany
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Forschungszentrum Jülich · RWTH Aachen University
Affiliation as printed
Forschungszentrum Jülich GmbH, Peter Grünberg Institut 14, Germany and RWTH Aachen University, Faculty of Electrical Engineering and Information Technology, Germany
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References 12
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