Button Shear Testing for Adhesion Measurements of 2D Materials
Abstract
Two-dimensional (2D) materials are considered for numerous applications in microelectronics, although several challenges remain when integrating them into functional devices. Weak adhesion is one of them, caused by their chemical inertness. Quantifying the adhesion of 2D materials on three-dimensional surfaces is, therefore, an essential step toward reliable 2D device integration. To this end, button shear testing is proposed and demonstrated as a method for evaluating the adhesion of 2D materials with the examples of graphene and hexagonal boron nitride (hBN), molybdenum disulfide, and tungsten diselenide on silicon dioxide (SiO${_2}$) and silicon nitride substrates. We propose a fabrication process flow for polymer buttons on the 2D materials and establish suitable button dimensions and testing shear speeds. We show with our quantitative data that low substrate roughness and oxygen plasma treatments on the substrates before 2D material transfer result in higher shear strengths. Thermal annealing increases the adhesion of hBN on SiO${_2}$ and correlates with the thermal interface resistance between these materials. This establishes button shear testing as a reliable and repeatable method for quantifying adhesion of 2D materials.
Authors 9
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Affiliation as printed
Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
Infineon Technologies AG, Wernerwerkstraße 2, 93049 Regensburg, Germany
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Affiliation as printed
Infineon Technologies AG , Wernerwerkstraße 2 , 93049 Regensburg , Germany
Infineon Technologies AG, Wernerwerkstraße 2, 93049 Regensburg, Germany
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Universitat de Barcelona · Deggendorf Institute of Technology
Affiliation as printed
Department of Applied Physics , University of Barcelona , Martí i Franquès 1 , 08028 Barcelona , Spain
Department of Electrical Engineering and Media Technology , Deggendorf Institute of Technology , Dieter-Görlitz-Platz 1 , 94469 Deggendorf , Germany
Department of Applied Physics, University of Barcelona, Martí i Franquès 1, 08028 Barcelona, Spain
Department of Electrical Engineering and Media Technology, Deggendorf Institute of Technology, Dieter-Görlitz-Platz 1, 94469 Deggendorf, Germany
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Helmut Schmidt University · Deggendorf Institute of Technology
Affiliation as printed
Department of Electrical Engineering , Helmut Schmidt University/University of the Federal Armed Forces Hamburg , Holstenhofweg 85 , 22043 Hamburg , Germany
Department of Electrical Engineering and Media Technology , Deggendorf Institute of Technology , Dieter-Görlitz-Platz 1 , 94469 Deggendorf , Germany
Department of Electrical Engineering and Media Technology, Deggendorf Institute of Technology, Dieter-Görlitz-Platz 1, 94469 Deggendorf, Germany
Department of Electrical Engineering, Helmut Schmidt University/University of the Federal Armed Forces Hamburg, Holstenhofweg 85, 22043 Hamburg, Germany
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Affiliation as printed
Infineon Technologies AG , Wernerwerkstraße 2 , 93049 Regensburg , Germany
Infineon Technologies AG, Wernerwerkstraße 2, 93049 Regensburg, Germany
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T. Schaffus corresponding Aachen AMO GmbH Advanced Microelectronic Center Aachen Chair of Electronic Devices
AMO (Germany) · RWTH Aachen University
Affiliation as printed
Infineon Technologies AG , Wernerwerkstraße 2 , 93049 Regensburg , Germany
AMO GmbH, Advanced Microelectronic Center Aachen, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
Chair of Electronic Devices, RWTH Aachen University, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
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Affiliation as printed
Infineon Technologies AG , Wernerwerkstraße 2 , 93049 Regensburg , Germany
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Affiliation as printed
Infineon Technologies AG , Wernerwerkstraße 2 , 93049 Regensburg , Germany
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