Electrically pumped GeSn/SiGeSn micro-rings lasers on Si with minimum threshold current of 40 mA
IEEE Silicon Photonics Conference (SiPhotonics), pp. 1–2
Abstract
The characterization of electrically pumped GeSn micro-ring lasers fabricated using standard CMOS technology is presented. Micro-rings cavities with a large set of geometric design parameters are compared from the point of view of laser performance like threshold and optical emission intensity.
Authors 8
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Affiliation as printed
Peter-Grünberg-Institute (PGI-9),Forschungszentrum Jülich,Jülich,Germany
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Affiliation as printed
Institut für Halbleitertechnik, University of Stuttgart,Stuttgart,Germany
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Jülich Aachen Research Alliance · RWTH Aachen University
Affiliation as printed
Institute of Integrated Photonics, RWTH Aachen University,Aachen,Germany
Institute of Integrated Photonics, RWTH Aachen University, Aachen, Germany
JARA-Fundamentals of Future Information Technologies, Aachen, Germany
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Affiliation as printed
Institut für Halbleitertechnik, University of Stuttgart,Stuttgart,Germany
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Jülich Aachen Research Alliance · RWTH Aachen University
Affiliation as printed
Institute of Integrated Photonics, RWTH Aachen University,Aachen,Germany
Institute of Integrated Photonics, RWTH Aachen University, Aachen, Germany
JARA-Fundamentals of Future Information Technologies, Aachen, Germany
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Leibniz Institute for High Performance Microelectronics
Affiliation as printed
IHP-Leibniz Institut für innovative Mikroelektronik,Frankfurt (Oder),Germany
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Affiliation as printed
Peter-Grünberg-Institute (PGI-9),Forschungszentrum Jülich,Jülich,Germany
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Affiliation as printed
Peter-Grünberg-Institute (PGI-9),Forschungszentrum Jülich,Jülich,Germany
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References 6
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