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Electrically pumped GeSn/SiGeSn micro-rings lasers on Si with minimum threshold current of 40 mA

IEEE Silicon Photonics Conference (SiPhotonics), pp. 1–2

Abstract

The characterization of electrically pumped GeSn micro-ring lasers fabricated using standard CMOS technology is presented. Micro-rings cavities with a large set of geometric design parameters are compared from the point of view of laser performance like threshold and optical emission intensity.

Authors 8

  1. Forschungszentrum Jülich

    Affiliation as printed

    Peter-Grünberg-Institute (PGI-9),Forschungszentrum Jülich,Jülich,Germany

  2. University of Stuttgart

    Affiliation as printed

    Institut für Halbleitertechnik, University of Stuttgart,Stuttgart,Germany

  3. Jülich Aachen Research Alliance · RWTH Aachen University

    Affiliation as printed

    Institute of Integrated Photonics, RWTH Aachen University,Aachen,Germany

    Institute of Integrated Photonics, RWTH Aachen University, Aachen, Germany

    JARA-Fundamentals of Future Information Technologies, Aachen, Germany

  4. University of Stuttgart

    Affiliation as printed

    Institut für Halbleitertechnik, University of Stuttgart,Stuttgart,Germany

  5. Jülich Aachen Research Alliance · RWTH Aachen University

    Affiliation as printed

    Institute of Integrated Photonics, RWTH Aachen University,Aachen,Germany

    Institute of Integrated Photonics, RWTH Aachen University, Aachen, Germany

    JARA-Fundamentals of Future Information Technologies, Aachen, Germany

  6. Leibniz Institute for High Performance Microelectronics

    Affiliation as printed

    IHP-Leibniz Institut für innovative Mikroelektronik,Frankfurt (Oder),Germany

  7. Forschungszentrum Jülich

    Affiliation as printed

    Peter-Grünberg-Institute (PGI-9),Forschungszentrum Jülich,Jülich,Germany

  8. Forschungszentrum Jülich

    Affiliation as printed

    Peter-Grünberg-Institute (PGI-9),Forschungszentrum Jülich,Jülich,Germany

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References 6

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