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Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si

ACS Photonics, vol. 10, pp. 217–224

Abstract

High Resolution Image Download MS PowerPoint Slide SiGeSn holds great promise for enabling fully group-IV integrated photonics operating at wavelengths extending in the mid-infrared range. Here, we demonstrate an electrically pumped GeSn microring laser based on SiGeSn/GeSn heterostructures. The ring shape allows for enhanced strain relaxation, leading to enhanced optical properties, and better guiding of the carriers into the optically active region. We have engineered a partial undercut of the ring to further promote strain relaxation while maintaining adequate heat sinking. Lasing is measured up to 90 K, with a 75 K T 0 . Scaling of the threshold current density as the inverse of the outer circumference is linked to optical losses at the etched surface, limiting device performance. Modeling is consistent with experiments across the range of explored inner and outer radii. These results will guide additional device optimization, aiming at improving electrical injection and using stressors to increase the bandgap directness of the active material.

Authors 13

  1. RWTH Aachen University

    Affiliation as printed

    Institute of Integrated Photonics, RWTH Aachen University and JARA-Fundamentals of Future Information Technologies, 52074 Aachen, Germany

  2. University of Stuttgart

    Affiliation as printed

    Institut für Halbleitertechnik, University of Stuttgart, 70569 Stuttgart, Germany

  3. Forschungszentrum Jülich · Jülich Aachen Research Alliance

    Affiliation as printed

    Peter Grünberg Institute 9, Forschungszentrum Jülich and JARA-Fundamentals of Future Information Technologies, 52428 Jülich, Germany

  4. RWTH Aachen University

    Affiliation as printed

    Institute of Integrated Photonics, RWTH Aachen University and JARA-Fundamentals of Future Information Technologies, 52074 Aachen, Germany

  5. Forschungszentrum Jülich · Jülich Aachen Research Alliance

    Affiliation as printed

    Peter Grünberg Institute 9, Forschungszentrum Jülich and JARA-Fundamentals of Future Information Technologies, 52428 Jülich, Germany

  6. Leibniz Institute for High Performance Microelectronics

    Affiliation as printed

    IHP-Leibniz Institut für innovative Mikroelektronik, 15236 Frankfurt (Oder), Germany

  7. University of Leeds

    Affiliation as printed

    School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom

  8. University of Stuttgart

    Affiliation as printed

    Institut für Halbleitertechnik, University of Stuttgart, 70569 Stuttgart, Germany

  9. Forschungszentrum Jülich · Jülich Aachen Research Alliance

    Affiliation as printed

    Peter Grünberg Institute 9, Forschungszentrum Jülich and JARA-Fundamentals of Future Information Technologies, 52428 Jülich, Germany

  10. Roma Tre University · Leibniz Institute for High Performance Microelectronics

    Affiliation as printed

    Department of Science, Roma Tre University, Viale G. Marconi 446, 00146 Rome, Italy

    IHP-Leibniz Institut für innovative Mikroelektronik, 15236 Frankfurt (Oder), Germany

  11. University of Stuttgart

    Affiliation as printed

    Institut für Halbleitertechnik, University of Stuttgart, 70569 Stuttgart, Germany

  12. RWTH Aachen University

    Affiliation as printed

    Institute of Integrated Photonics, RWTH Aachen University and JARA-Fundamentals of Future Information Technologies, 52074 Aachen, Germany

  13. Dan Buca corresponding

    Forschungszentrum Jülich · Jülich Aachen Research Alliance

    Affiliation as printed

    Peter Grünberg Institute 9, Forschungszentrum Jülich and JARA-Fundamentals of Future Information Technologies, 52428 Jülich, Germany

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References 33