Strain Engineered Electrically Pumped SiGeSn Microring Lasers on Si
ACS Photonics, vol. 10, pp. 217–224
Abstract
High Resolution Image Download MS PowerPoint Slide SiGeSn holds great promise for enabling fully group-IV integrated photonics operating at wavelengths extending in the mid-infrared range. Here, we demonstrate an electrically pumped GeSn microring laser based on SiGeSn/GeSn heterostructures. The ring shape allows for enhanced strain relaxation, leading to enhanced optical properties, and better guiding of the carriers into the optically active region. We have engineered a partial undercut of the ring to further promote strain relaxation while maintaining adequate heat sinking. Lasing is measured up to 90 K, with a 75 K T 0 . Scaling of the threshold current density as the inverse of the outer circumference is linked to optical losses at the etched surface, limiting device performance. Modeling is consistent with experiments across the range of explored inner and outer radii. These results will guide additional device optimization, aiming at improving electrical injection and using stressors to increase the bandgap directness of the active material.
Authors 13
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Affiliation as printed
Institute of Integrated Photonics, RWTH Aachen University and JARA-Fundamentals of Future Information Technologies, 52074 Aachen, Germany
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Affiliation as printed
Institut für Halbleitertechnik, University of Stuttgart, 70569 Stuttgart, Germany
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Forschungszentrum Jülich · Jülich Aachen Research Alliance
Affiliation as printed
Peter Grünberg Institute 9, Forschungszentrum Jülich and JARA-Fundamentals of Future Information Technologies, 52428 Jülich, Germany
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Affiliation as printed
Institute of Integrated Photonics, RWTH Aachen University and JARA-Fundamentals of Future Information Technologies, 52074 Aachen, Germany
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Forschungszentrum Jülich · Jülich Aachen Research Alliance
Affiliation as printed
Peter Grünberg Institute 9, Forschungszentrum Jülich and JARA-Fundamentals of Future Information Technologies, 52428 Jülich, Germany
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Leibniz Institute for High Performance Microelectronics
Affiliation as printed
IHP-Leibniz Institut für innovative Mikroelektronik, 15236 Frankfurt (Oder), Germany
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Affiliation as printed
School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
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Affiliation as printed
Institut für Halbleitertechnik, University of Stuttgart, 70569 Stuttgart, Germany
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Forschungszentrum Jülich · Jülich Aachen Research Alliance
Affiliation as printed
Peter Grünberg Institute 9, Forschungszentrum Jülich and JARA-Fundamentals of Future Information Technologies, 52428 Jülich, Germany
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Roma Tre University · Leibniz Institute for High Performance Microelectronics
Affiliation as printed
Department of Science, Roma Tre University, Viale G. Marconi 446, 00146 Rome, Italy
IHP-Leibniz Institut für innovative Mikroelektronik, 15236 Frankfurt (Oder), Germany
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Affiliation as printed
Institut für Halbleitertechnik, University of Stuttgart, 70569 Stuttgart, Germany
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Affiliation as printed
Institute of Integrated Photonics, RWTH Aachen University and JARA-Fundamentals of Future Information Technologies, 52074 Aachen, Germany
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Dan Buca corresponding
Forschungszentrum Jülich · Jülich Aachen Research Alliance
Affiliation as printed
Peter Grünberg Institute 9, Forschungszentrum Jülich and JARA-Fundamentals of Future Information Technologies, 52428 Jülich, Germany
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