Study on sneak path effect in self-rectifying crossbar arrays based on emerging memristive devices

Frontiers in Electronic Materials, vol. 2

Abstract

The high demand for performance and energy efficiency poses significant challenges for computing systems in recent years. The memristor-based crossbar array architecture is enthusiastically regarded as a potential competitor to traditional solutions due to its low power consumption and fast switching speed. Especially by leveraging self-rectifying memristive devices, passive crossbar arrays potentially enable high memory densities. Nonetheless, due to the lack of a switching control per cell, these passive, self-rectifying memristive crossbar arrays (srMCA) suffer from sneak path current issues that limit the range of accurate operation of the crossbar array. In this work, the sneak path current issues in the passive srMCAs based on self-rectifying bipolar and complementary switching memristive devices are comparatively analyzed. Under consideration of the worst-case scenario, three reading schemes are investigated: one wordline pull-up (OneWLPU), all wordline pull-up (AllWLPU), and floating (FL) reading schemes. As a conclusion, despite different switching dynamics, both types of self-rectifying memristive devices can efficiently suppress sneak path current in the srMCAs. In the FL reading scheme, the sneak path current flowing through the unselected reversely biased memristive cells in the srMCA can be considered as an accurate estimation for the practical sneak path current in the srMCA. By analyzing the sneak path current in the srMCAs with a size up to 64 × 64, it is demonstrated that the leakage current plays a crucial role for suppressing the sneak path current, and the sneak path current via an individual cell exhibits a continuous decrease while the accumulated total sneak path current in the unselected reverse biased region is increasing with expanding the crossbar size. The comparative study on the bipolar and complementary memristive devices based srMCAs under diverse reading schemes reveals the influence of the switching dynamics on the sneak path current effect in the srMCAs, and provides a beneficial reference and feasible solutions for the future optimization of the crossbar topology with the intention of mitigating sneak path effects.

Authors 11

1. Ziang Chen

   Chemnitz University of Technology · Leibniz Institute of Photonic Technology · Friedrich Schiller University Jena

   Affiliation as printed

   Department of Electrical Engineering and Information Technology, Technical University of Chemnitz, Chemnitz, Germany

   Department of Quantum Detection, Leibniz Institute of Photonic Technology (IPHT), Jena, Germany

   Institute for Solid State Physics, Friedrich Schiller University Jena, Jena, Germany

2. Guofu Zhang

   Chemnitz University of Technology

   Affiliation as printed

   Department of Electrical Engineering and Information Technology, Technical University of Chemnitz, Chemnitz, Germany

3. Hao Cai

   Chemnitz University of Technology · Leibniz Institute of Photonic Technology · Friedrich Schiller University Jena

   Affiliation as printed

   Department of Electrical Engineering and Information Technology, Technical University of Chemnitz, Chemnitz, Germany

   Department of Quantum Detection, Leibniz Institute of Photonic Technology (IPHT), Jena, Germany

   Institute for Solid State Physics, Friedrich Schiller University Jena, Jena, Germany

4. Christopher Bengel Aachen Institute of Materials in Electrical Engineering and Information Technology

   RWTH Aachen University

   Affiliation as printed

   Institute of Materials in Electrical Engineering and Information Technology, RWTH Aachen University, Aachen, Germany

5. Feng Liu

   Forschungszentrum Jülich

   Affiliation as printed

   Peter Grünberg Institut (PGI-7), Forschungszentrum Juelich GmbH, Juelich, Germany

6. Xianyue Zhao

   Chemnitz University of Technology · Leibniz Institute of Photonic Technology · Friedrich Schiller University Jena

   Affiliation as printed

   Department of Electrical Engineering and Information Technology, Technical University of Chemnitz, Chemnitz, Germany

   Department of Quantum Detection, Leibniz Institute of Photonic Technology (IPHT), Jena, Germany

   Institute for Solid State Physics, Friedrich Schiller University Jena, Jena, Germany

7. Shahar Kvatinsky

   Technion – Israel Institute of Technology

   Affiliation as printed

   Andrew and Erna Viterbi Faculty of Electrical and Computer Engineering, Technion-Israel Institute of Technology, Haifa, Israel

8. Heidemarie Schmidt

   Leibniz Institute of Photonic Technology · Friedrich Schiller University Jena

   Affiliation as printed

   Department of Quantum Detection, Leibniz Institute of Photonic Technology (IPHT), Jena, Germany

   Institute for Solid State Physics, Friedrich Schiller University Jena, Jena, Germany

9. Rainer M. Waser Aachen Institute of Materials in Electrical Engineering and Information Technology

   Forschungszentrum Jülich · RWTH Aachen University

   Affiliation as printed

   Institute of Materials in Electrical Engineering and Information Technology, RWTH Aachen University, Aachen, Germany

   Peter Grünberg Institut (PGI-10), Forschungszentrum Juelich GmbH, Juelich, Germany

   Peter Grünberg Institut (PGI-7), Forschungszentrum Juelich GmbH, Juelich, Germany

10. Stephan Menzel corresponding

    Forschungszentrum Jülich

    Affiliation as printed

    Peter Grünberg Institut (PGI-7), Forschungszentrum Juelich GmbH, Juelich, Germany

11. Nan Du corresponding

    Chemnitz University of Technology · Leibniz Institute of Photonic Technology · Friedrich Schiller University Jena

    Affiliation as printed

    Department of Electrical Engineering and Information Technology, Technical University of Chemnitz, Chemnitz, Germany

    Department of Quantum Detection, Leibniz Institute of Photonic Technology (IPHT), Jena, Germany

    Institute for Solid State Physics, Friedrich Schiller University Jena, Jena, Germany