Advancing in-memory Arithmetic Based on CMOS-integrable Memristive Crossbar Structures

PROOF, vol. 1, pp. 80–89

Abstract

Memristive computing will be advantageous in large-scale, highly parallel mixed-mode processing architectures because processing can be performed directly within memristive memory architectures and intrachip communication can be implemented by a memristive crossbar structure with reconfigurable logic gates. Here we report on the development of a new concept for in-memory adders, using XOR functionality. Exploited memristive crossbar structures are based on memristive complementary resistive switches, e.g. TaOx, and BiFeO3.

Authors 2

1. Eike Linn Aachen Institut für Werkstoffe der Elektrotechnik II

   RWTH Aachen University

   Affiliation as printed

   Institut für Werkstoffe der Elektrotechnik II RWTH Aachen University Sommerfeldstr. 24, D-52074 Aachen GERMANY

2. Heidemarie Schmidt

   Chemnitz University of Technology

   Affiliation as printed

   Department of Materials for Nanoelectronics Technische Universität Chemnitz, Nano-Spintronics group Reichenhainer Str, 39, D-09126 Chemnitz GERMANY