SiC-Based dv/dt Generator for Insulation Testing with Fast and Adjustable Switching Transients
IEEE Workshop on Wide Bandgap Power Devices and Applications, pp. 188–193
Abstract
The fast switching transients of wide-bandgap power semiconductor devices lead to reduced switching losses and thereby enable higher switching frequencies and power densities. However, these fast switching transients increase the stress on insulation materials and can cause accelerated aging of the insulation system, leading to premature failure. To fully exploit the advantages of wide-bandgap power semiconductor devices, it is crucial to investigate the effects of steep voltage slopes on insulation materials. For this purpose, a dv/dt generator that enables insulation testing with adjustable fast switching transients and generates symmetrical voltage slopes of up to 166 V/ns is introduced in this paper. Its fast short-circuit protection ensures safe operation even for destructive insulation tests.
Authors 4
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Affiliation as printed
Institute for Power Electronics and Electrical Drives (ISEA) – RWTH Aachen University, Jägerstrasse 17/19, Aachen, Germany
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Affiliation as printed
Institute for Power Electronics and Electrical Drives (ISEA) – RWTH Aachen University, Jägerstrasse 17/19, Aachen, Germany
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Affiliation as printed
Institute for Power Electronics and Electrical Drives (ISEA) – RWTH Aachen University, Jägerstrasse 17/19, Aachen, Germany
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Affiliation as printed
Institute for Power Electronics and Electrical Drives (ISEA) – RWTH Aachen University, Jägerstrasse 17/19, Aachen, Germany
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