GaN-Based Full-Bridge Converter With Digitally Adjustable Voltage Slopes for Characterization of Interwinding Insulation Properties of Magnetic High-Frequency Power Components

IEEE Transactions on Industry Applications, vol. 57, pp. 6288–6294

Abstract

The very high switching speed of wide bandgap semiconductor devices enables higher switching frequencies at lower losses. However, it can also cause negative effects on the insulation material. For investigating the effect of steep voltage slopes on interwinding insulation systems, a gallium nitride based full-bridge converter with digitally adjustable voltage slopes is developed and presented within this article.

Authors 4

1. Vivien Grau Aachen Institute for Power Electronics and Electrical Drives (ISEA)

   RWTH Aachen University

   Affiliation as printed

   Institute for Power Electronics and Electrical Drives, RWTH Aachen University, Aachen, Germany

2. Arne Hendrik Wienhausen Aachen Institute for Power Electronics and Electrical Drives (ISEA)

   RWTH Aachen University

   Affiliation as printed

   Institute for Power Electronics and Electrical Drives, RWTH Aachen University, Aachen, Germany

3. Marcel Kossek Aachen Institute for Power Electronics and Electrical Drives (ISEA)

   RWTH Aachen University

   Affiliation as printed

   Institute for Power Electronics and Electrical Drives, RWTH Aachen University, Aachen, Germany

4. Rik W. De Doncker Aachen Institute for Power Electronics and Electrical Drives (ISEA)

   RWTH Aachen University

   Affiliation as printed

   Institute for Power Electronics and Electrical Drives, RWTH Aachen University, Aachen, Germany