Superconducting Phase Induced by a Local Structure Transition in Amorphous Sb2Se3 under High Pressure
Physical Review Letters, vol. 127, pp. 127002
Abstract
Superconductivity and Anderson localization represent two extreme cases of electronic behavior in solids. Surprisingly, these two competing scenarios can occur in the same quantum system, e.g., in an amorphous superconductor. Although the disorder-driven quantum phase transition has attracted much attention, its structural origins remain elusive. Here, we discovered an unambiguous correlation between superconductivity and density in amorphous Sb_{2}Se_{3} at high pressure. Superconductivity first emerges in the high-density amorphous (HDA) phase at about 24 GPa, where the density of glass unexpectedly exceeds its crystalline counterpart, and then shows an enhanced critical temperature when pressure induces crystallization at 51 GPa. Ab initio simulations reveal that the bcc-like local geometry motifs form in the HDA phase, arising from distinct "metavalent bonds." Our results demonstrate that HDA phase is critical for the incipient superconductive behavior.
Authors 11
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Center for High Pressure Science and Technology Advanced Research · Center for High Pressure Science & Technology Advanced Research
Affiliation as printed
Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People’s Republic of China
Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
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Wuhan National Laboratory for Optoelectronics · Huazhong University of Science and Technology
Affiliation as printed
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
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Center for High Pressure Science and Technology Advanced Research · Center for High Pressure Science & Technology Advanced Research
Affiliation as printed
Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People’s Republic of China
Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
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Wuhan National Laboratory for Optoelectronics · Huazhong University of Science and Technology
Affiliation as printed
Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
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Center for High Pressure Science and Technology Advanced Research · Center for High Pressure Science & Technology Advanced Research
Affiliation as printed
Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People’s Republic of China
Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
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Affiliation as printed
Center for Advanced Radiation Sources, University of Chicago, Chicago, Illinois, USA
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Affiliation as printed
Center for Advanced Radiation Sources, University of Chicago, Chicago, Illinois, USA
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Affiliation as printed
NSF’s ChemMatCARS, University of Chicago, Chicago, Illinois 60637, USA
NSF's ChemMatCARS, University of Chicago, Chicago, Illinois 60637, USA
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Affiliation as printed
Institute of Physics IA, RWTH Aachen University, 52074 Aachen, Germany
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Center for High Pressure Science and Technology Advanced Research · Center for High Pressure Science & Technology Advanced Research
Affiliation as printed
Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People’s Republic of China
Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
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Center for High Pressure Science and Technology Advanced Research · Center for High Pressure Science & Technology Advanced Research
Affiliation as printed
Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People’s Republic of China
Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai 201203, People's Republic of China
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