May 31, 2021 article Double‐Gate MoS2 Field‐Effect Transistors with Full‐Range Tunable Threshold Voltage for Multifunctional Logic Circuits Advanced Materials DOI: 10.1002/adma.202101036 OpenAlex Authors 0 Author list not loaded yet. Cited by 2 stored of 93 Search Sort Most cited Newest Oldest Patent citations Title Any typearticle review book-chapter conference-paper preprint dissertation book dataset other Any fieldAgricultural and Biological Sciences Arts and Humanities Biochemistry, Genetics and Molecular Biology Business, Management and Accounting Chemical Engineering Chemistry Computer Science Decision Sciences Dentistry Earth and Planetary Sciences Economics, Econometrics and Finance Energy Engineering Environmental Science Health Professions Immunology and Microbiology Materials Science Mathematics Medicine Neuroscience Nursing Pharmacology, Toxicology and Pharmaceutics Physics and Astronomy Psychology Social Sciences Veterinary Open access Re‐Thinking Electronic Circuit Design Through Emerging Reconfigurable Field Effect Transistors 2026 Advanced Science article Engineering Advancements in Semiconductor Devices and Circuit Design Open access 0 citations Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning 2022 Nature Electronics article Materials Science Graphene research and applications Open access 140 citations 2 results References 0